发明名称 Solid state image sensor
摘要 A solid state image sensor is constructed such that a plurality of linear image sensors are provided to have at least one row of photodiodes in each of the plurality of linear image sensors and a photodiode array is formed by arranging the plurality of linear image sensors side by side. A control gate electrode used to retrieve electric charges and a polysilicon electrode serving as a charge transfer electrode are provided between the pluraliielding conductive film is provided on the polysilicon electrode to partition the plurality of linear image sensors into individual linear image sensors. Accordingly, a light beam incident on a certain linear image sensor can be prevented from entering another linear image sensor adjacent to the certain linear image sensor, thereby reducing a difference between the amounts of signal charges outputted from different linear image sensors and suppressing smear.
申请公布号 US6753558(B2) 申请公布日期 2004.06.22
申请号 US20030424703 申请日期 2003.04.28
申请人 NEC ELECTRONICS CORPORATION 发明人 FUTAMURA FUMIAKI
分类号 H01L27/14;H01L27/148;H01L31/0216;H01L31/062;H01L31/113;H04N5/335;H04N5/359;H04N5/369;H04N5/372;(IPC1-7):H01L27/148 主分类号 H01L27/14
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