| 摘要 |
PURPOSE:To obtain a diode which can be readily altered in the oscillating frequency by varying an external DC bias voltage to alter the travel region length of charge. CONSTITUTION:In a semiconductor oscillation element which utilizes the charge travel time effect occurred by avalanche multiplication a semiconductor layer IIIwhich has a conductive type different from a region IV in which the avalanche multiplication occurs and a region II in which charge produced by the avalanche multiplication travels is formed between the region IV and the region II, a semiconductor layer III which has a conductive type different from these two regions is formed, a bias voltage V1 is externally applied to the layer III, and the length of the travel region is altered by the bias voltage, thereby enabling to vary the oscillating frequency. |
