PROCESS FOR MANUFACTURING INTEGRATED CIRCUITS COMPRISING MOS FIELD-EFFECT TRANSISTORS USING SILICON GATE TECHNOLOGY HAVING SILICIDE LAYERS ON DIFFUSION REGIONS AS LOW-OHMIC CONDUCTORS
摘要
申请公布号
EP0090318(B1)
申请公布日期
1989.06.14
申请号
EP19830102803
申请日期
1983.03.21
申请人
SIEMENS AKTIENGESELLSCHAFT BERLIN UND MUNCHEN
发明人
SCHWABE, ULRICH. DR. PHIL.;NEPPL, FRANZ, DR.RER.NAT.;HIEBER, KONRAD, DR.
