THIN FILM FORMING DEVICE

摘要

PURPOSE:To form the thin film of a high melting-point metallic material on a substrate with low residual stress at high yield by providing a table of an insulating material on a sample base also used as an electrode and furnishing an electrode for applying a high-frequency power and a sample holder on the table. CONSTITUTION:The table 301 of an insulating material is provided on the water- cooled sample base 3 also used as an electrode. A high-frequency power source 4 is connected to a coaxial cable 304 passing through the table 301 through a capacitor 5. A high frequency power is applied during the formation of a film on the surface of a sample 11 from a conductive electrode 302 of a jig 303 for holding the sample 11 through the electrode 302 connected to the coaxial cable 304 to generate a negative bias. By this method, the thin film of a high melting point metallic material having a desired low residual stress is formed on the sample 11 fixed by the jig 303.