| 摘要 |
PURPOSE:To obtain semiconductor material wherein a GaAs or InP crystal layer of high quality is formed on an Si substrate, by arranging, directly or via a buffer layer, an Si or Si-Ge crystal layer on a GaAs or InP substrate. CONSTITUTION:GaAs based semiconductor material is formed as follows; an Si buffer layer 2 for lattice matching is formed on a GaAs substrate 1 by MOCJD and the like, and an Si crystal layer 3 is epitaxially grown on the buffer layer 2 by yo-yo solute supplying method. When a semiconductor device is constituted from said semiconductor material, the Si crystal layer 3 is used as an Si substrate, and the GaAs substrate 1 is used as a GaAs crystal layer. InP based semiconductor material is formed as follows; an Si buffer layer 2 is formed on an InP substrate 1, and further an Si crystal layer 3 is epitaxially grown by yo-yo solute supplying method. When a semiconductor device is made also from said material, an inverse mode is applied wherein the Si crystal layer 3 is used as an Si substrate, and the InP substrate 1 is used as an InP crystal layer. |
