发明名称 Single level metal memory cell using chalcogenide cladding
摘要 An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
申请公布号 US6757190(B2) 申请公布日期 2004.06.29
申请号 US20010774353 申请日期 2001.01.30
申请人 OVONYX, INC. 发明人 LOWREY TYLER A.
分类号 G11C17/06;H01L27/24;(IPC1-7):G11C11/00 主分类号 G11C17/06
代理机构 代理人
主权项
地址