| 摘要 |
PURPOSE:To obtain the high frequency line which has large current capacity by forming a center conductor on a substrate or within the range of the thickness of a grounding conductor above the substrate at a specific distance from the grounding conductor. CONSTITUTION:The grounding conductor 3 whose thickness t1 and width are much smaller than the width of the dielectric or semiconductor substrate 1 is formed on the substrate 1. Further, a dielectric film 2 which has thickness (h) is formed on the substrate 1 across the grounding conductor 3 and on the dielectric film 2, the center conductor 5 in a strip shape which has width (2) and thickness (t) is formed at the distance (d) from the grounding conductor 3. On the dielectric film 2 and center conductor 5, a dielectric film 4 which has thickness h1 is formed across the ground conductor 3. When the thickness (t) of the center conductor is constant, characteristic impedance is determined by the distance (d) between the grounding conductor and center conductor and the width (w) of the center conductor, so the current capacity is greatly and easily increased while the characteristic impedance is held nearly constant by varying the distance (d). |
