| 摘要 |
A compound semiconductor device according to the present invention has a first GaAs layer (2), on a semiconductor substrate (1) made of GaAs or silicon, excessively including arsenic formed at a growing temperature equal to or less than 300 DEG C. On the first GaAs layer (2), a group III-V compound semiconductor layer (4,5) including In formed at a high temperature equal to or more than 500 DEG C is provided through a second GaAs layer (3), which is for the purpose of absorbing a growing temperature change. On the In containing group III-V compound semiconductor layer (5), a third GaAs layer (6) is formed at a growing temperature equal to or more than 500 DEG C, and then, an active layer (7) for forming a transistor region is formed. In this growing process, the arsenic excessively included in the first GaAs layer (2) precipitates to form a high resistance layer. Also, the diffusion of the excessive arsenic to the active layer (7) is prevented by the group III-V compound semiconductor layer (5) including In. As a result, the compound semiconductor device having a high break-down voltage and high frequency characteristics is obtained. <MATH> |
