| 摘要 |
<p>PURPOSE: To provide a process for producing transfer mask which is capable of perpendicularly etching trenches regardless of pattern sizes and is consequently capable of producing a transfer mask having the dimensional accuracy extremely high over the entire surface of the mask. CONSTITUTION: Isolated auxiliary patterns are formed within at least a part of the openings among the openings to be subjected to taper etching or reverse taper etching under specified etching condition at the time of patterning an etching mask layer by using a lithography technique and the openings are dryetched.</p> |
