| 摘要 |
<p>PURPOSE: To uniforming treat the whole surface of a wafer with plasma by a method wherein a plurality of flow passages of refrigerant are formed in a conductor and divided into a circumferential flow passage and a center flow passage, where the conductance of the circumferential flow passage is made larger than the conductance of the center flow passage. CONSTITUTION: An insulating film 7, made of alumina and titania, is formed on the surface of an aluminum conductive material 6, and a flow passage of refrigerant 1 is formed in the conductive material 6. A refrigerant introducing hole 2 and a refrigerant discharge hole 3 are provided in the refrigerant flow passage 1, and the flow passage is divided into a circumferential flow passage 51, a center flow passage 52 and a circumferential flow passage 53 by flow passage walls 41 and 42. The conductance of the circumferential flow passages 51 and 52 is made larger than the conductance of the center flow passage. As a result, the whole surface of a wafer is uniformly treated with plasma.</p> |
