| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase energy of impurity and form an impurity layer deep in a field region by a method wherein, after a pad oxide film, a polycrystalline silicon film and a nitrogen film are formed, an oxide film of a layer is further formed, and an injection of a channel stop impurity layer into an active region is prevented. SOLUTION: A first oxide film 32, a silicon film 34 and a nitrogen film 36 are formed on a semiconductor substrate 30, and a second oxide film 38 is formed on the nitrogen film 36, so that when a channel stop impurity is injected, the injection of impurity into an active region is also limited. After a photoresist is applied to the entire face, a photoresist pattern 39 restricting a field region FA is formed. Thereby, an active region AA is restricted naturally. Next, by the use of the photoresist 39 as a mask, the second oxide film 38 and the nitride film 36 are etched, and a second oxide film pattern 38a having a window 40 and a nitride film pattern 36a are formed to remove the photoresist pattern 39. A channel stop impurity which is identical to the impurity first injected to the entire face is ion-implanted.</p> |
