发明名称 |
Damascene double-gate FET |
摘要 |
A double-gate field effect transistor (DGFET) is provided using a damascene-like replacement gate processing step to create sidewall source/drain regions, oxide spacers and gate structures inside a previously formed trench. The damascene-like replacement gate processing step allows for the fabrication of a tapered transistor body region having a thicker body under the contacts which reduces access resistance.
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申请公布号 |
US6762101(B2) |
申请公布日期 |
2004.07.13 |
申请号 |
US20030411727 |
申请日期 |
2003.04.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN K.;JONES ERIN C.;SOLOMON PAUL M.;WONG HON-SUM PHILLIP |
分类号 |
H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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