发明名称 |
Deposition of fluorinated silicon glass |
摘要 |
<p>A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 mu m with an aspect ratio of up to 4.5:1.</p> |
申请公布号 |
EP0883166(A2) |
申请公布日期 |
1998.12.09 |
申请号 |
EP19980107996 |
申请日期 |
1998.04.30 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ORCZYK, MACIEK;PRAVIN, NARWANKAR;LAXMAN, MURUGESH |
分类号 |
H01L21/31;C03C3/06;C23C16/40;C23C16/46;H01L21/3105;H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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