| 摘要 |
<p>The invention concerns methods for producing CMOS transistors and related devices. The method produces transistors of a first type and of a second type in CMOS technology in an active layer. It consists in: etching or rendering inactive zones of the active layer so as to define (1) active islands designed to produce sources, channels of specific length and drains of the first type transistors and the second type transistors respectively; covering (2) at least the active islands with an insulating layer and covering (2) the insulating layer with a conductive layer; sequentially etching (3) the assembly of the gates of the first type transistor, then the gates of the second type transistors. The related devices consist of CMOS transistors obtained by the inventive method. The invention is particularly applicable to addressing and control devices of a flat-panel liquid-crystal display with active matrix.</p> |
