| 摘要 |
PROBLEM TO BE SOLVED: To provide a quartz glass crucible which has a characteristic that a crystal phase is uniformly formed on the inner surface of the quartz glass crucible in a short time and with which the probability of the formation of dislocations in a silicon single crystal can be reduced. SOLUTION: In the quartz glass crucible for pulling the silicon single crystal, a surface layer containing at least one or more elements selected from Zr, Nb, Hf, Ta and rare earth elements is formed at the inner surface of the quartz glass crucible to be brought into at least contact with a silicon melt.
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