| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor crystal thin film, by which the temperature in the surface of a substrate can be kept uniform when a film is formed, and to provide a device which is used in the method. SOLUTION: The device for producing the semiconductor crystal thin film has a vacuum chamber 11 capable of being made high vacuum, a partition plate 13 which has an opening 13a for holding a substrate and separates the space of the vacuum chamber 11 into two spaces P and Q in such a way that the substrate is set on the opening 13a, a heater 15 for supplying radiation heat to the substrate 12 from the rear side, which substrate is held by the partition plate 13, and a manifold 16 for supplying a crystal forming gas to the surface of the substrate 12. A semiconductor crystal is grown by using the device under such a condition that the rear of the substrate 12 is covered by a soaking plate 20 which is brought into contact with the rear of the substrate 12.
|
