发明名称 Method of manufacturing sensor and resistor element
摘要 A sensor in which a field effect transistor element 3 having a gate electrode 6 on its rear side is electrically connected onto a resistive element 2 having a top surface electrode and a bottom surface electrode in such a way that the gate electrode 6 and a portion of the top surface electrode of the resistive element 2 coincides, and a grounding electrode 12 on a substrate is electrically connected with the bottom surface electrode of the resistive element 2 so that they coincides.
申请公布号 US6395575(B1) 申请公布日期 2002.05.28
申请号 US20000463144 申请日期 2000.01.20
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 UMEDA SHINJI;NOMURA KOJI;IBATA AKIHIKO;FUJII HIROSHI;MASUTANI TAKESHI
分类号 G01D5/16;G01J5/02;G01J5/20;(IPC1-7):H01L21/00 主分类号 G01D5/16
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