发明名称 |
Method of manufacturing sensor and resistor element |
摘要 |
A sensor in which a field effect transistor element 3 having a gate electrode 6 on its rear side is electrically connected onto a resistive element 2 having a top surface electrode and a bottom surface electrode in such a way that the gate electrode 6 and a portion of the top surface electrode of the resistive element 2 coincides, and a grounding electrode 12 on a substrate is electrically connected with the bottom surface electrode of the resistive element 2 so that they coincides.
|
申请公布号 |
US6395575(B1) |
申请公布日期 |
2002.05.28 |
申请号 |
US20000463144 |
申请日期 |
2000.01.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
UMEDA SHINJI;NOMURA KOJI;IBATA AKIHIKO;FUJII HIROSHI;MASUTANI TAKESHI |
分类号 |
G01D5/16;G01J5/02;G01J5/20;(IPC1-7):H01L21/00 |
主分类号 |
G01D5/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|