| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a high reverse breakdown-voltage IGBT which is suitable for mass production, has small variation in quality, exhibits a high yield, and can be cheaply manufactured, and to provide a method of manufacturing the same. SOLUTION: An n-type semiconductor EQR (Equipotential Ring) of an annular shape is formed surrounding a cell composed of a control electrode and an emitter in the IGBT (Insulated-Gate Bipolar Transistor) which performs its function by the emitter, a collector of a p-type region, and the control electrode. In addition, a p-type isolation region is formed in the peripheral part covering the total thickness of the each element by an impurity-diffusion method or the like. COPYRIGHT: (C)2005,JPO&NCIPI
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