| 摘要 |
PROBLEM TO BE SOLVED: To realize a high-speed response and high-sensitivity characteristics by solving a problem with formation of a p diffusion layer caused by outdiffusion in a circuit-built-in light receiving element of a PIN structure. SOLUTION: A semiconductor device has a light receiving element and an integrated circuit for processing an output electric signal of the light receiving element, both formed on an identical substrate. The light receiving element has a PIN structure having a p<SP>+</SP>-layer 2, a p-type epitaxial growth layer 3 formed on the p<SP>+</SP>-layer, an n-type epitaxial growth layer 4 formed on the p-type epitaxial growth layer 3, and an n<SP>+</SP>-diffusion layer 5 formed on the n-type epitaxial growth layer 4. The n<SP>+</SP>-diffusion layer 5 is formed to have such a depth as to reach the p-type epitaxial growth layer 3. COPYRIGHT: (C)2005,JPO&NCIPI
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