| 摘要 |
An ESD protection circuit includes: a first metal oxide semiconductor (MOS) transistor discharging an excessive electrostatic current generated between an input pad and an internal circuit, and having a first terminal connected to a ground voltage supply terminal; and a second MOS transistor discharging an electrostatic current generated between the input pad and the internal circuit, and having a gate and a first terminal connected to a bulk terminal of the first MOS transistor. The first terminal is connected to the ground voltage supply terminal through an interconnection line having a parasitic resistance with a predetermined value.
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