发明名称 |
METHOD FOR CRYSTALLIZING A SEMICONDUCTOR THIN FILM |
摘要 |
<p>A method for crystallizing a semiconductor thin film is provided to form a polycrystalline region on the semiconductor thin film by arranging regularly band-shaped crystal grains having good shape accuracy. A method for crystallizing a semiconductor thin film(3) includes a process for crystallizing the corresponding semiconductor thin film by scanning and irradiating continuously an energy beam on the semiconductor thin film at a predetermined speed. The energy beam is scanned in parallel lines by maintaining pitches equal to or less than an irradiation diameter of the energy beam so that band-shaped crystal grains are grown in a direction different from a scanning direction of the energy beam. The pitch for scanning the energy beam in parallel lines is equal to or less than the irradiation radius of the corresponding energy beam.</p> |
申请公布号 |
KR20070093337(A) |
申请公布日期 |
2007.09.18 |
申请号 |
KR20070022519 |
申请日期 |
2007.03.07 |
申请人 |
SONY CORPORATION |
发明人 |
FUJINO TOSHIO;MACHIDA AKIO;KONO TADAHIRO |
分类号 |
H01L21/20;H01L21/268;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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