发明名称 METHOD FOR CRYSTALLIZING A SEMICONDUCTOR THIN FILM
摘要 <p>A method for crystallizing a semiconductor thin film is provided to form a polycrystalline region on the semiconductor thin film by arranging regularly band-shaped crystal grains having good shape accuracy. A method for crystallizing a semiconductor thin film(3) includes a process for crystallizing the corresponding semiconductor thin film by scanning and irradiating continuously an energy beam on the semiconductor thin film at a predetermined speed. The energy beam is scanned in parallel lines by maintaining pitches equal to or less than an irradiation diameter of the energy beam so that band-shaped crystal grains are grown in a direction different from a scanning direction of the energy beam. The pitch for scanning the energy beam in parallel lines is equal to or less than the irradiation radius of the corresponding energy beam.</p>
申请公布号 KR20070093337(A) 申请公布日期 2007.09.18
申请号 KR20070022519 申请日期 2007.03.07
申请人 SONY CORPORATION 发明人 FUJINO TOSHIO;MACHIDA AKIO;KONO TADAHIRO
分类号 H01L21/20;H01L21/268;H01L29/786 主分类号 H01L21/20
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