Memory data reading method for e.g. conductive bridging RAM memory circuit, involves detecting current flowing via cell and adjusting control parameter based on current, where measuring parameter is selected from different values of cell

摘要

The method involves detecting a current (I) flowing through a memory cell (2). A control parameter (S) is adjusted depending on the detected current such that the current corresponds to reference current. The current flowing through the memory cell is compared with the reference current. A measuring parameter is applied to an evaluation transistor, and is changed until a sign changes a difference between the current and the reference current. The measuring parameter is selected from different resistance values of the memory cell. An independent claim is also included for a memory circuit with a reading unit.