发明名称 SPIN-ON ANTI-REFLECTIVE COATINGS FOR PHOTOLITHOGRAPHY
摘要 <p>Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.</p>
申请公布号 KR20040066124(A) 申请公布日期 2004.07.23
申请号 KR20047007486 申请日期 2001.11.15
申请人 发明人
分类号 G03F7/075;G03F7/11;C08G77/00;C08G77/04;C09D1/00;C09D5/32;C09D7/12;C09D183/04;C09K3/00;G03C1/492;G03F7/09;H01L21/027 主分类号 G03F7/075
代理机构 代理人
主权项
地址