发明名称 |
SIDE SURFACE LIGHT EMITTING SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SIDE SURFACE LIGHT EMITTING SEMICONDUCTOR ELEMENT |
摘要 |
A side surface light emitting semiconductor element is provided with an AlGaN layer doped with Mg at a concentration of 5x1019cm-3 or less; a stripe-shaped ridge formed at an upper portion of a laminated structure including the AlGaN layer and an active layer; and a Schottky barrier formed on an upper surface of the laminated structure other than the ridge from which the AlGaN layer is exposed. ® KIPO & WIPO 2009
|
申请公布号 |
KR20080112264(A) |
申请公布日期 |
2008.12.24 |
申请号 |
KR20087024200 |
申请日期 |
2008.10.02 |
申请人 |
ROHM CO., LTD. |
发明人 |
NAKAHARA KEN |
分类号 |
H01L33/40;H01S5/042;H01L33/06;H01L33/14;H01L33/32;H01S5/22 |
主分类号 |
H01L33/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|