CONTACT STRUCTURES OF SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME

摘要

A contact structure of a semiconductor device and a manufacturing method thereof are provided to prevent leakage current from flowing into a semiconductor substrate as a titanium silicide layer is formed with uniform thickness in a impurity region due to the conductivity shock-absorbing pattern. An insulating layer(23) is formed on a semiconductor substrate(21). A contact hole patterning the insulating layer and exposing the fixed region of the semiconductor substrate is formed. A conductivity shock-absorbing pattern(27) is formed on the side wall of the contact hole and the exposed semiconductor substrate. A barrier metal pattern is formed on the conductivity shock-absorbing pattern. A conductive plug(35) filling up encapsulated space is formed into the barrier metal pattern.