发明名称 |
Method for forming a lithography pattern |
摘要 |
A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.
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申请公布号 |
US7482280(B2) |
申请公布日期 |
2009.01.27 |
申请号 |
US20060426233 |
申请日期 |
2006.06.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHING-YU;LIN CHIN-HSIANG;LIN BURN JENG |
分类号 |
H01L21/302;G03F7/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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