| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory cell which can reduce its size.SOLUTION: There are provided anti-fuses (memory element) 21A and 21B respectively inserted into plural paths of which one ends are connected to each other, resistance elements 22A and 22B inserted into at least one of the plural paths, and a selection transistor 23 which connects a first connection terminal to the one ends of the plural paths by changing its condition to be an on-state. The anti-fuse is inserted into each of the plural paths of which one ends are connected to each other. The resistance element is inserted into at least one of the plural paths. The selection transistor connects the first connection terminal to the one ends of the plural paths by changing its condition to be the on-state.SELECTED DRAWING: Figure 2 |
