| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide substrate and a producing method of the silicon carbide substrate in which a device formation region may be effectively ensured.SOLUTION: A silicon carbide monocrystal substrate 11 is prepared, which comprises a first main surface 11a off from {0001} surface and a first peripheral edge part 11c2 arranged in a successive manner to the first main surface 1a. A silicon carbide epitaxial layer 12 is formed on the first main surface 1a. The silicon carbide epitaxial layer 12 comprises a second main surface 12b contacting to the first main surface 11a, a third main surface 12a2 at the opposite side to the second main surface 12b and a second peripheral edge part 12c2 arranged in a successive manner to the second main surface 12b and the third main surface 12a2. A peripheral edge region C comprising the first peripheral edge part 11c2 and the second peripheral edge part 12c2 is removed. The thickness of the silicon carbide epitaxial layer 12 in vertical direction relatively to the third main surface 12a2 is 50 μm or more.SELECTED DRAWING: Figure 4 |
