| 摘要 |
Disclosed is a method for manufacturing a group III semiconductor luminescent device. The method comprises the following steps: growing a substrate, a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in sequence from bottom to top to form an epitaxial structure; depositing a transparent conducting layer on the p-type nitride semiconductor layer, defining boss patterns by using a yellow-light etching process, so as to obtain a boss; depositing an insulation layer on an upper surface of the transparent conducting layer and a surface of the boss, and defining patterns of a P-type line electrode and an N-type line electrode by using a yellow-light stripping process; defining patterns of a P-type bonding pad and an N-type bonding pad by using the yellow-light stripping process, depositing the P-type bonding pad and the N-type bonding pad, and then removing a photoresist by using the stripping process, so as to manufacture a wafer; and finally thinning, scribing, splintering, testing and sorting the wafer. Compared with a normal high-order installation method, the manufacturing method provided in the present invention has fewer production procedures, shortens the production cycle, greatly reduces the production cost, enlarges the light-emitting area, lowers the operating voltage, and increases the brightness. |
