发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要 The present invention provides a thin film transistor array panel and a method for manufacturing the same having advantages in that disconnection of an insulating layer disposed on a low-resistive wire is reduced or effectively prevented. A thin film transistor array panel according to one embodiment of the present invention includes: a gate line disposed on a substrate and including a gate electrode; a first gate insulating layer disposed on the substrate and the gate line, the first gate insulting layer including a first portion and a second portion which is thinner than that of the first portion; a second gate insulating layer disposed on the first gate insulating layer; a semiconductor layer formed on the second gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a protective layer on the second gate insulating layer, the source electrode and the drain electrode; and a pixel electrode disposed on the protective layer and connected to the drain electrode. The first portion is disposed on the substrate and the second portion is disposed on the gate line. The first gate insulating layer and the second gate insulating layer have stress in opposite directions from each other.
申请公布号 KR20160090963(A) 申请公布日期 2016.08.02
申请号 KR20150010711 申请日期 2015.01.22
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 MOON, YOUNG MIN;CHOUNG, JONG HYUN;KIM, BONG KYUN
分类号 G02F1/1368;G02F1/1362;H01L29/786 主分类号 G02F1/1368
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