发明名称 OVERHEAT DETECTION CIRCUIT AND POWER SOURCE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an overheat detection circuit having a small circuit scale, being of low cost, with less power consumption.SOLUTION: There are provided a reference voltage circuit connected between a base and an emitter of a parasitic bipolar transistor, and a current detection circuit connected to an emitter of the parasitic bipolar transistor. The current detection circuit detects that current flows the parasitic bipolar transistor and outputs an overheat detection signal, relating to the overheat detection circuit configured in a CMOS semiconductor device.SELECTED DRAWING: Figure 1
申请公布号 JP2016143279(A) 申请公布日期 2016.08.08
申请号 JP20150019470 申请日期 2015.02.03
申请人 SII SEMICONDUCTOR CORP 发明人 HARADA NORIYUKI;SAKAGUCHI KAORU
分类号 G05F3/22 主分类号 G05F3/22
代理机构 代理人
主权项
地址