发明名称 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light-emitting element excellent in the light emission amount when a substrate has a rectangular shape.SOLUTION: A light-emitting element 100 includes a substrate 110 of rectangular shape having a first long side S1, a second long side S2, a first short side j1 and a second short side j2, an n-type contact layer 120 on the substrate 110, a plurality of n dot electrodes ND on the n-type contact layer 120, a first column L1 where some of the plurality of n dot electrodes ND are arranged along the first long side S1, and a second column L2 where the remainder of the plurality of n dot electrodes ND are arranged along the second long side S2. The plurality of n dot electrodes ND belong to any one of the first column L1 or the second column L2. The n dot electrodes ND belonging to the first column L1 and the n dot electrodes ND belonging to the second column L2 are staggered.SELECTED DRAWING: Figure 1
申请公布号 JP2016143682(A) 申请公布日期 2016.08.08
申请号 JP20150016140 申请日期 2015.01.29
申请人 TOYODA GOSEI CO LTD 发明人 KAWAI TAKASHI;GOSHONOO KOICHI;YABANETA KOSUKE
分类号 H01L33/38 主分类号 H01L33/38
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