Electronic device

摘要

An electronic device including a semiconductor memory. The semiconductor memory includes a bit line; a source line; a plurality of resistive memory cells among which a selected memory cell forms a current path between the bit line and the source line; a read current supply unit configured to supply read current to the bit line in a read operation; a sense amplifier configured to generate read data in response to a voltage level of the bit line in the read operation; and a variable switch element configured to flow current from the source line to a ground terminal in the read operation, and be decreased in its resistance value as a voltage level of the source line is high.

主权项

1. An electronic device including a semiconductor memory, the semiconductor memory comprising:
a bit line; a source line; a plurality of resistive memory cells coupled to the bit line and the source line in a way that enables a memory cell to be selected to form a current path between the bit line and the source line, wherein each resistive memory cell includes a variable resistance element of which resistance value changes according to a logic value of data stored therein and a switch element coupled to the resistive memory cell to form a current path through the variable resistance element between the bit line and the source line; a read current supply unit coupled to the bit line and configured to supply a read current to the bit line in a read operation of a selected memory cell; a sense amplifier coupled to the bit line to sense a voltage level in the read operation and configured to generate read data in response to the sensed voltage level of the bit line; and a PMOS transistor coupled between the source line and an electrical ground and configured to flow a current from the source line to the electrical ground in the read operation.