发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
The purpose of the present invention is to improve semiconductor integrated circuit reliability. A semiconductor integrated circuit (40) comprises: a first conduction-type first well region (2); a second conduction-type second well region (3) provided in an upper section of the first well region (2); and a first conduction-type current suppression layer (21) provided at a distance from the first well region (2), in a lower section of a second conduction-type semiconductor substrate 1 directly below the first well region (2). |
申请公布号 |
WO2016132417(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
WO2015JP06497 |
申请日期 |
2015.12.28 |
申请人 |
FUJI ELECTRIC CO.,LTD. |
发明人 |
KANNO, Hiroshi;SUMIDA, Hitoshi |
分类号 |
H01L21/8238;H01L21/76;H01L21/822;H01L27/04;H01L27/08;H01L27/092 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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