发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 The purpose of the present invention is to improve semiconductor integrated circuit reliability. A semiconductor integrated circuit (40) comprises: a first conduction-type first well region (2); a second conduction-type second well region (3) provided in an upper section of the first well region (2); and a first conduction-type current suppression layer (21) provided at a distance from the first well region (2), in a lower section of a second conduction-type semiconductor substrate 1 directly below the first well region (2).
申请公布号 WO2016132417(A1) 申请公布日期 2016.08.25
申请号 WO2015JP06497 申请日期 2015.12.28
申请人 FUJI ELECTRIC CO.,LTD. 发明人 KANNO, Hiroshi;SUMIDA, Hitoshi
分类号 H01L21/8238;H01L21/76;H01L21/822;H01L27/04;H01L27/08;H01L27/092 主分类号 H01L21/8238
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