| 摘要 |
Provided are a tunnelling field effect transistor and a manufacturing method therefor, belonging to the technical field of field effect transistors. The tunnelling field effect transistor (10) comprises: a substrate (103) having two ends respectively provided with a first doped region (101) and a second doped region (102); a channel region (104), a protective layer (105), a sidewall-shaped channel etching hard mask layer structure (106), and a gate insulating medium layer (107) are arranged on the substrate (103), the channel region (104) having a fin-shaped protrusion; a first gate (108) and a second gate (109) are formed on the substrate (103) formed with the gate insulating medium layer (107), and the first gate (108) and the second gate (109) are respectively located on two sides of the channel region (104); an insulating material filling layer (110) is formed on the substrate (103) formed with the first gate (108) and the second gate (109); a doped region interval of the first doped region (101) and the second doped region (102) is a preset distance, the preset distance being greater than the width of the channel region and less than the length of the substrate (103). The present invention solves the problem that the versatility of EHB-TFET structures is relatively low, implements an effect of increasing versatility, and is used for the turning on and turning off of a control device. |
