发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that manufacturing cost and chip area cannot be reduced because a formation area of an electrode pad is increased or the number of pads is increased, when electrode pads different in current capacity delivered and received to and from the outside exist in a semiconductor device. <P>SOLUTION: In the semiconductor device, an electrode pad with small current capacity of delivering and receiving to and from the outside is set as reference, and thinning of metal thread is realized. Connection with electrode pads 1 of an IC chip 2 is performed by using metal thread 5 of identical system. In electrode pad 1 with large current capacity of delivering and receiving to and from the outside, a bump electrode 13 is formed, and a plurality of metal threads 5 are connected. As a result, a large current capacity can be delivered and received, and manufacturing cost and chip area can be reduced. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004221264(A) 申请公布日期 2004.08.05
申请号 JP20030006081 申请日期 2003.01.14
申请人 SANYO ELECTRIC CO LTD;KANTO SANYO SEMICONDUCTORS CO LTD 发明人 TSUBONOYA MAKOTO
分类号 H01L21/60 主分类号 H01L21/60
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