| 发明名称 | Semiconductor device with stripe-shaped trench gate structures and gate connector structure | ||
| 摘要 | A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate connector structure at a distance to the first surface is electrically connected to a gate electrode in the trench gate structure. A gate dielectric separates the gate electrode from the semiconductor body. First sections of the gate dielectric outside a vertical projection of the gate connector structure are thinner than second sections within the vertical projection of the gate connector structure. | ||
| 申请公布号 | US9530850(B2) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201514976566 | 申请日期 | 2015.12.21 |
| 申请人 | Infineon Technologies AG | 发明人 | Aichinger Thomas;Bergner Wolfgang |
| 分类号 | H01L29/423;H01L29/739;H01L29/16;H01L29/06;H01L21/8234 | 主分类号 | H01L29/423 |
| 代理机构 | Baker Botts L.L.P. | 代理人 | Baker Botts L.L.P. |
| 主权项 | 1. A semiconductor device, comprising: a transistor cell that comprises a stripe-shaped trench gate structure extending from a first surface into a semiconductor body; a gate connector structure at a distance to the first surface and at a distance to end sections of the trench gate structure, and electrically connected to a gate electrode in the trench gate structure; and a gate dielectric separating the gate electrode from the semiconductor body, wherein first sections of the gate dielectric outside a vertical projection of the gate connector structure are thinner than second sections within the vertical projection of the gate connector structure. | ||
| 地址 | Neubiberg DE | ||