| 摘要 |
<p>In the prod. of semi-conductors in which substrates are coated with Cr or Mo or W and covered with a mask, which is then etched to form the required structures, etching is carried out by using a plasma of a reaction gas which consists of a mixt. of gaseous O2 and CF4, pref. 90% O2 and 10% CF4. Plasma etching is performed at a pressure inside the vessel of 0.1-10 torr. The mask is composed of Al metal. Method is more economical and does not present health hazards as the reaction gas is free of Cl gas. Safety measures are not necessary and the reactor can be made of less costly material. Used for the prod. of semi-conductors.</p> |
