发明名称 |
Method of forming a microscopic pattern with far UV pattern exposure, alkaline solution development, and dry etching |
摘要 |
A film of a photoresist having phenolic hydroxyl groups is irradiated with far-ultraviolet radiation, and is thereafter developed with an alkaline aqueous solution. Using as a mask a resist pattern thus obtained, dry etching is carried out to form a microscopic pattern. Since the photoresist is highly immune against the dry etching, the microscopic pattern can be formed at a high precision. By adding an azide of a specified structure, the photoresist has its sensitivity to the far-ultraviolet radiation enhanced more.
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申请公布号 |
US4614706(A) |
申请公布日期 |
1986.09.30 |
申请号 |
US19840606216 |
申请日期 |
1984.05.02 |
申请人 |
HITACHI, LTD. |
发明人 |
MATSUZAWA, TOSHIHARU;IWAYANAGI, TAKAO;DOUTA, KIKUO;YANAZAWA, HIROSHI;KOHASHI, TAKAHIRO;NONOGAKI, SABURO |
分类号 |
H01L21/30;G03F7/012;H01L21/027;(IPC1-7):G03F7/26;C23F1/08 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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