Single crystals of semi-insulating indium phosphide and processes for making them.

摘要

Crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all native Fe, Co and Cr of 0.05 ppmw or less. The crystal has a resistivity of 1x10<6> OMEGA .cm or more and a mobility of above 3,000 cm<2>/V.s both at 300 K. A process of producing crystal has a step of heat-treating intermediate under 6 kg/cm<2> of phosphorus vapor pressure. The produced semiconductor device is a MIS device operating in essentially the same high-speed manner as a HEMT.