发明名称 Semiconductor contact via structure and method.
摘要 <p>A contact opening through an insulating layer is filled with metal and etched back to form a metal plug within the opening. A metal interconnect line can then be formed over the contact, and makes electrical contact with the metal plug. Since the contact opening is filled by the metal plug, it is not necessary for the metal signal line to have a widened portion in order to ensure enclosure. <IMAGE></p>
申请公布号 EP0455341(A2) 申请公布日期 1991.11.06
申请号 EP19910302577 申请日期 1991.03.25
申请人 SGS-THOMSON MICROELECTRONICS, INC. 发明人 LIOU, FU-TAI;SPINNER, CHARLES RALPH
分类号 H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/485;H01L23/52;H01L23/522;H01L23/532 主分类号 H01L21/28
代理机构 代理人
主权项
地址