发明名称 STRUCTURE OF MIM DIODE AND METHOD FOR ITS MANUFACTURE.
摘要 <p>This diode is used for a liquid crystal display of an active matrix type. The parasitic capacitance of the diode can be reduced, and a film with a large area and an even thickness can be formed, making it possible to fabricate a large liquid crystal display. An MIM diode has a structure made up of a metal layer for the lead-in electrode which is connected to a data bus, an ITO layer for the transparent electrode for forming a pixel, a metal layer for an electrode connecting the metal layer for the lead-in electrode, and the ITO layer, and an insulating layer between the metal layers for the lead-in electrode and connecting electrode. In this diode, a layer of porous aluminium oxide p-Al2O3 is formed between the insulating layer and the metal layer for connecting electrode. <IMAGE></p>
申请公布号 EP0629008(A1) 申请公布日期 1994.12.14
申请号 EP19940903110 申请日期 1993.12.28
申请人 ORION ELECTRIC CO., LTD. 发明人 KIM, SUNG HWAN
分类号 G02F1/136;H01L45/00;(IPC1-7):H01L49/02 主分类号 G02F1/136
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