发明名称 X-RAY DIAGNOSTIC DEVICE
摘要 PROBLEM TO BE SOLVED: To precisely and quickly measure an X-ray dosage by forming an electrode layer as a detector on a non-conductive layer formed on a semiconductor layer and connecting the electrode layer to a charge measuring converter by exposure correspondign to the X-ray dosage. SOLUTION: An electrode layer 12 is positioned under a semiconductor layer 9, and the layer 9 is formed on a glass substrate 13. Responding electrodes of photodiodes of respective pixels are positioned on the substrate 13. A three- light transmissive layer 12 is formed in the rear side of the substrate 13. A terminal 11 coated with a scintillator layer 10 exists on the layer 9. The electric charge generated between the layer 9 and the substrate 13 is detected via the terminal 11 and the layer 12. The layer 12 is formed on a non-conductive layer, and the layer 12 is formed on either the substrate 13 or the layer 10 corresponding to the pixel structure. The electric charge of the photodiodes of the pixels fluctuates at a high speed during the time the X-rays are pulsed. In the plane having a large number of photodiodes, the beam received on the plane can be measured by capacitive coupling for detecting the micro-fluctuations. Consequently, precise X-ray dosage can be measured.
申请公布号 JPH0855695(A) 申请公布日期 1996.02.27
申请号 JP19950189347 申请日期 1995.07.25
申请人 SIEMENS AG 发明人 DEIITORITSUHI HASURAA;MARUTEIN HOOAIZERU
分类号 H05G1/64;A61B6/00;G01T1/24;G01T1/29;H04N5/32;H05G1/44;(IPC1-7):H05G1/64 主分类号 H05G1/64
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