Semiconductor light emitting device

摘要

On a first cladding layer formed of n-type Al0.7Ga0.3P, an active region having a staggered-type (type II) heterojunction superlattice structure is disposed. The active region includes 50 light emitting layers formed of Al0.1Ga0.9P doped with nitrogen and 50 barrier layers formed of Al0.7Ga0.3P. The 50 light emitting layers and the 50 barrier layers formed of such materials are stacked alternately to form 50 pairs. On the active region, a second cladding layer formed of Al0.1Ga0.9P is disposed. In the formation of the active layer, the composition of the light emitting layer and the barrier layer and the thickness of the barrier layer are controlled so that the isoelectronic level in the light emitting layer and the quantum level in the barrier layer will fulfill the resonance conditions. The carriers injected into the conduction band are confined in the quantum level in the barrier layer and transfer to the isoelectronic level in the light emitting layer by the resonance tunneling effect.