| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad suitable for polishing a semiconductor wafer wherein generation of scratch is little, the lifetime of a polishing layer is superior and the polishing rate is stabilized, in a polishing pad which has the polishing layer in which fine abrasive particles are dispersed in a resin and uses no slurry. <P>SOLUTION: In a treatment method of a polishing pad, fine abrasive particles are dispersed in a resin, the surface of a polishing pad wherein surface roughness of a pad surface is 0.5-5 μm, and the surface of a polishing pad in which fine abrasive particles are dispersed in the resin are subjected to a dressing by using a dresser after polishing or during polishing, and the roughness of the pad surface is made 0.5-5 μm. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
