| 摘要 |
PROBLEM TO BE SOLVED: To perform reticle alignment and base line check with high precision when lighting condition of exposing beam is changed. SOLUTION: Images of alignment marks 29A, 30A on a reticle 12 is projected, under an exposing beam, via a projection optical system 8, and the images are relatively scanned with aperture patterns 41A, 41B on a wafer stage. Position deviation amount of the alignment marks 29A, 30A to the aperture patterns 41A, 41B is detected from a photoelectric signal which is obtained by receiving the exposure beam which transmits the aperture patterns 41A, 41B, with photoelectric sensors 64A, 64B, via optical fibers 42A, 42B or the like. Deflecting mirrors 15, 16 are set in an optical path in the exposure light, and position deviation amount of the alignment marks 29A, 30A to the aperture patterns 41A, 41B is detected in a reticle alignment system which is not shown in figure. Offset of the reticle alignment system is obtained from difference between the two position deviation amounts. |
