发明名称 Half power supply voltage generator and semiconductor memory device using the same
摘要 The present invention relates to a half power supply voltage generating circuit and a semiconductor memory device having the same. The half power supply voltage generating circuit according to the present invention includes components that allow it to operate regardless of whether the power supply falls below a threshold voltage of included MOS transistors.
申请公布号 US6781891(B2) 申请公布日期 2004.08.24
申请号 US20030349386 申请日期 2003.01.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUN KI-CHUL
分类号 H01L27/04;G05F1/10;G11C5/14;G11C11/407;H01L21/822;(IPC1-7):G11C7/00 主分类号 H01L27/04
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