发明名称 |
Half power supply voltage generator and semiconductor memory device using the same |
摘要 |
The present invention relates to a half power supply voltage generating circuit and a semiconductor memory device having the same. The half power supply voltage generating circuit according to the present invention includes components that allow it to operate regardless of whether the power supply falls below a threshold voltage of included MOS transistors.
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申请公布号 |
US6781891(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20030349386 |
申请日期 |
2003.01.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUN KI-CHUL |
分类号 |
H01L27/04;G05F1/10;G11C5/14;G11C11/407;H01L21/822;(IPC1-7):G11C7/00 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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