发明名称 |
Solid-state imaging device and manufacturing method thereof and semiconductor device manufacturing method |
摘要 |
A solid-state imaging device is able to prevent a sensitivity from being lowered and to suppress a smear caused as a pixel size is reduced and to provide an excellent image quality even though it is miniaturized and a manufacturing method thereof is proposed.Also, a method of manufacturing a semiconductor device is able to form a conductive layer having an excellent adhesion with an underlayer and whose surface has an excellent flatness in the process for forming a metal interconnection and the process for burying a contact-hole. A solid-state imaging device (20) includes a light-shielding film (6) of a two layer structure comprising a first film (11) formed of a film deposited by a sputtering or vapor deposition and a second film (12) formed of a tungsten film deposited by a chemical vapor deposition.
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申请公布号 |
US6781210(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20010917681 |
申请日期 |
2001.07.31 |
申请人 |
SONY CORPORATION |
发明人 |
SUGIMOTO DAI;MATSUDA TAKESHI |
分类号 |
H01L27/14;H01L21/00;H01L21/4763;H01L31/02;(IPC1-7):H01L31/02 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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