| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same improved in reliability by achieving a semiconductor package, hardly generating cracks or fatigue damage due to stress caused by the difference of a linear expansion coefficient by permitting the bonding of a semiconductor wafer to a glass substrate at a normal temperature. SOLUTION: In the manufacturing method of the semiconductor device, a semiconductor wafer 10, on which a plurality of devices to be sealed (semiconductor integrated circuit, CCD or the like) are formed, and a glass substrate 11 for supporting the semiconductor wafer 10 and sealing the devices to be sealed are prepared. The manufacturing method comprises a coating process of a normal temperature curing resin 12 on either of the main surface of the semiconductor wafer 10 which is opposed to the glass substrate 11, or the main surface of the glass substrate 11 which is opposed to the semiconductor wafer 10; a bonding process of the semiconductor wafer 10 to the glass substrate 11 at a normal temperature through the normal temperature curing resin 12; and a partitioning process for scribing the semiconductor wafer 10 along a scribe line to partition the wafer 10 into individual semiconductor packages. COPYRIGHT: (C)2005,JPO&NCIPI |
