| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming an NAND-type flash memory nonvolatile memory element which can reduce the dispersion of cell characteristics. <P>SOLUTION: After first mask patterns 120d, 120c, and 120s are arranged at large intervals, interval adjustment films 130 are formed so as to be conformal. Second mask patterns 140c and 140g are formed to fill grooves 132 and 134 that are defined among the first mask pattern 120d, 120c, and 120s, respectively, by the interval adjustment films 130. Accordingly, a grounding selective gate line 140g, a cell gate line 140c and a string select gate line 120s can be formed so that all of these are arranged at equal intervals. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
